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100V TOLL Package MOSFET

Introduction MOSFET application power is more and more large, reduce the MOSFET conduction internal resistance, improve the heat dissipation performance of MOSFET, reduce the volume, improve the power density of MOSFET, MOSFET practitioners tireless pursuit. The Yangjie Technology To-Leadless (TOLL)MOSFET package is optimized TO handle currents up to 280A, increasing power density while dramatically reducing space footprint. Compared with the D2PAK, the occupied space is reduced by 30% and the height is reduced by 50%, resulting in a total space saving of nearly 60%, making the board design more compact.

Features 1. The maximum current capacity is 280A, and fewer parallel and heat dissipation components are required; 2. The welding area is improved, which significantly reduces the electromigration phenomenon and high system reliability; 3. Very low encapsulation parasitic effect, low EMI; 4. No pin package, support extremely compact design; 5 using TOLL packaging, better calorific value characteristics.

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Products
Automotive Rectifier Protection Diode Small Signal Mosfet IGBT Module Press-pack Device SiC 4/5″wafer 6″wafer Integrated circuit

Application
Automotive Clean Energy Industrial Power Supply Home Appliance Security Smart Meter Telecommunication

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Yangjie Technology SZ300373

11.88

▼RMB

2023-03-24 15:59:10

Tel： 400 106 0780(8:00~12:00 13:30~17:30)

E-mail： yangjie@21yangjie.com

Address： 6 Heye West Road, Hanjiang District, Yangzhou

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?2023 Yangzhou Yangjie Electronic Technology Co.,Ltd. 蘇ICP備12043831號-1

蘇公網(wǎng)安備 32100302010286號

Automotive

Rectifier

Bridge Rectifier
Standard
Recovery Rectifier
Fast Recovery Rectifier
High Efficient Rectifier
Super Fast
Recovery Rectifier
Schottky Barrier
Rectifier
PV Diode

Automotive Rectifier
Rectifier Diode Fast Recovery Rectifier Diode Schottky Diode

Rectifier Diode Fast Recovery Rectifier Diode Schottky Diode

Protection Diode

Transient Voltage
Suppressor
Thyristor Surge
Suppressor
ESD Protection Diode
Zener Diode

Thyristor
Uni-directional Thyristor Bi-directional Thyristor

Automotive Protection
Diode
Transient Voltage
Suppressor ESD Protection Diode Power Zener Diode

Uni-directional Thyristor Bi-directional Thyristor

Transient Voltage
Suppressor ESD Protection Diode Power Zener Diode

Small Signal

Small Signal
Switching Diode Small Signal
Schottky Diode Small Signal Zener Diode Small Signal Transisitor Power Transistor Small Signal Digital
Transisitor

MOSFET

ALL MOSFET
Automotive MOSFET

High-voltage
MOSFET(500V-1000V)
SJ MOSFET SiC MOSFET Planar MOSFET

Low & Medium Voltage
MOSFET(12V-400V)
N-Channel MOSFET P-Channel MOSFET

NP MOSFET(12V-300V)
Complementary MOSFET Dual N-Channel MOSFET Dual P-Channel MOSFET Half-bridge MOSFET

SJ MOSFET SiC MOSFET Planar MOSFET

N-Channel MOSFET P-Channel MOSFET

Complementary MOSFET Dual N-Channel MOSFET Dual P-Channel MOSFET Half-bridge MOSFET

SiC

SiC Schottky Diode
SiC MOSFET
SiC Schottky
Diode Modules
SiC MOSFET
Modules
SiC Automotive
Schottky Diode
SiC Automotive
MOSFET

IGBT

IGBT Module
IGBT Discrete
IGBT Automotive

Module

Rectifier Diodes Module
Fast Recovery Module
Schottky Module
Thyristor Module
Thyristor / Rectifier
Diode Module
Crimped Diode Module
Crimped Thyristor Module
Crimped Thyristor/Diode Module

Press-pack Device

Phase Control
Thyristor
Fast Switching
Thyristor
Bi-directional Thyristor
General Rectifier
Diode
Fast Recovery Diode
Welding Diode

4/5″wafer

STD Chip
FRD Chip
EPI Chip
TVS Chip
HVB High Voltage
Module Chip
Automotive
Electronics Chip

6″wafer

TSBD Chip
PSBD Chip
FRED Chip
LBD Chip
PMBD Chip
ESD Chip

Integrated circuit

LOAD Switches
LDO
Shunt Regulator
DC-DC